ISSI, Integrated Silicon Solution Inc IS42RM32200M-6BLI-TR
- 收藏
- 对比
IS42RM32200M-6BLI-TR
1266-IS42RM32200M-6BLI-TR
存储器
90-TFBGA
大陆
立即发货

IC DRAM 64M PARALLEL 90TFBGA
--最小包装量--
IS42RM32200M-6BLI-TR详情
ISSI, Integrated Silicon Solution Inc IS42RM32200M-6BLI-TR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
90-TFBGA
Memory Types
Volatile
操作温度
-40°C~85°C TA
包装
Tape & Reel (TR)
零件状态
活跃
湿度敏感性等级(MSL)
3 (168 Hours)
电压 - 供电
2.3V~2.7V
内存大小
64Mb 2M x 32
时钟频率
166MHz
访问时间
5.5ns
内存格式
DRAM
内存接口
Parallel
RoHS状态
ROHS3 Compliant
IS42RM32200M-6BLI-TR拓展信息
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc







哦! 它是空的。