ISSI, Integrated Silicon Solution Inc IS43DR82560B-3DBL-TR
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IS43DR82560B-3DBL-TR
1266-IS43DR82560B-3DBL-TR
存储器
60-TFBGA
大陆
立即发货

DRAM Chip DDR2 SDRAM 2G-Bit 256Mx8 1.8V 60-Pin TWBGA T/R
1最小包装量--
IS43DR82560B-3DBL-TR详情
ISSI, Integrated Silicon Solution Inc IS43DR82560B-3DBL-TR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
60-TFBGA
引脚数
60
Memory Types
Volatile
操作温度
0°C~85°C TC
包装
Tape & Reel (TR)
零件状态
活跃
湿度敏感性等级(MSL)
3 (168 Hours)
电压 - 供电
1.7V~1.9V
工作电源电压
1.8V
内存大小
2Gb 256M x 8
访问时间
450ps
内存格式
DRAM
内存接口
Parallel
写入周期时间 - 字符、页面
15ns
地址总线宽度
15b
密度
2 Gb
最高频率
333MHz
RoHS状态
ROHS3 Compliant
IS43DR82560B-3DBL-TR拓展信息
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc







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