ISSI, Integrated Silicon Solution Inc IS43DR82560C-3DBLI-TR
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IS43DR82560C-3DBLI-TR
1266-IS43DR82560C-3DBLI-TR
存储器
60-TFBGA
大陆
立即发货

IC DRAM 2G PARALLEL 60TWBGA
--最小包装量--
IS43DR82560C-3DBLI-TR详情
ISSI, Integrated Silicon Solution Inc IS43DR82560C-3DBLI-TR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
8 Weeks
安装类型
表面贴装
包装/外壳
60-TFBGA
Memory Types
Volatile
Usage Level
Industrial grade
操作温度
-40°C~85°C TA
包装
Tape & Reel (TR)
零件状态
活跃
湿度敏感性等级(MSL)
3 (168 Hours)
电压 - 供电
1.7V~1.9V
内存大小
2Gb 256M x 8
时钟频率
333MHz
访问时间
450ps
内存格式
DRAM
内存接口
Parallel
写入周期时间 - 字符、页面
15ns
RoHS状态
ROHS3 Compliant
IS43DR82560C-3DBLI-TR拓展信息
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc







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