ISSI, Integrated Silicon Solution Inc IS43DR86400C-3DBI
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IS43DR86400C-3DBI
1266-IS43DR86400C-3DBI
存储器
60-TFBGA
大陆
立即发货

IC DRAM 512M PARALLEL 60TWBGA
1最小包装量--
IS43DR86400C-3DBI详情
ISSI, Integrated Silicon Solution Inc IS43DR86400C-3DBI重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
60-TFBGA
引脚数
60
Memory Types
Volatile
操作温度
-40°C~85°C TA
包装
Tray
零件状态
活跃
湿度敏感性等级(MSL)
3 (168 Hours)
电压 - 供电
1.8V
最大电流源
120mA
内存大小
512Mb 64M x 8
时钟频率
333MHz
访问时间
450ps
内存格式
DRAM
内存接口
Parallel
数据总线宽度
8b
写入周期时间 - 字符、页面
15ns
RoHS状态
Non-RoHS Compliant
IS43DR86400C-3DBI拓展信息
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc







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