ISSI, Integrated Silicon Solution Inc IS43DR86400C-3DBL-TR
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IS43DR86400C-3DBL-TR
1266-IS43DR86400C-3DBL-TR
存储器
60-TFBGA
大陆
立即发货

DRAM 512M, 1.8V, 333Mhz 64Mx8 DDR2
1最小包装量--
IS43DR86400C-3DBL-TR详情
ISSI, Integrated Silicon Solution Inc IS43DR86400C-3DBL-TR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
8 Weeks
安装类型
表面贴装
包装/外壳
60-TFBGA
引脚数
60
Memory Types
Volatile
操作温度
0°C~70°C TA
包装
Tape & Reel (TR)
零件状态
活跃
湿度敏感性等级(MSL)
3 (168 Hours)
电压 - 供电
1.7V~1.9V
内存大小
512Mb 64M x 8
最大电源电流
120mA
时钟频率
333MHz
访问时间
450ps
内存格式
DRAM
内存接口
Parallel
数据总线宽度
8b
写入周期时间 - 字符、页面
15ns
RoHS状态
ROHS3 Compliant
IS43DR86400C-3DBL-TR拓展信息
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc







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