ISSI, Integrated Silicon Solution Inc IS43DR86400D-3DBI-TR
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IS43DR86400D-3DBI-TR
1266-IS43DR86400D-3DBI-TR
存储器
60-TFBGA
大陆
立即发货

DRAM Chip DDR2 SDRAM 512M-Bit 64M x 8 1.8V 60-Pin TWBGA T/R
1最小包装量--
IS43DR86400D-3DBI-TR详情
ISSI, Integrated Silicon Solution Inc IS43DR86400D-3DBI-TR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
60-TFBGA
引脚数
60
Memory Types
Volatile
操作温度
-40°C~85°C TA
包装
Tape & Reel (TR)
零件状态
最后一次购买
湿度敏感性等级(MSL)
3 (168 Hours)
电压 - 供电
1.7V~1.9V
工作电源电压
1.8V
内存大小
512Mb 64M x 8
时钟频率
333MHz
访问时间
450ps
内存格式
DRAM
内存接口
Parallel
写入周期时间 - 字符、页面
15ns
地址总线宽度
14b
密度
512 Mb
RoHS状态
Non-RoHS Compliant
IS43DR86400D-3DBI-TR拓展信息
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc







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