ISSI, Integrated Silicon Solution Inc IS43R16320E-6BI
- 收藏
- 对比
IS43R16320E-6BI
1266-IS43R16320E-6BI
存储器
60-TFBGA
大陆
立即发货

DRAM Chip DDR SDRAM 512M-Bit 32Mx16 2.5V/2.6V 60-Pin TFBGA
1最小包装量--
IS43R16320E-6BI详情
ISSI, Integrated Silicon Solution Inc IS43R16320E-6BI重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
60-TFBGA
安装类型
表面贴装
Memory Types
Volatile
包装
Tray
操作温度
-40°C~85°C TA
零件状态
活跃
湿度敏感性等级(MSL)
3 (168 Hours)
电压 - 供电
2.3V~2.7V
内存大小
512M 32M x 16
访问时间
700ps
内存格式
DRAM
内存接口
Parallel
写入周期时间 - 字符、页面
15ns
地址总线宽度
13b
密度
512 Mb
最高频率
166MHz
RoHS状态
ROHS3 Compliant
IS43R16320E-6BI拓展信息
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc







哦! 它是空的。