ISSI, Integrated Silicon Solution Inc IS43R83200B-6TL-TR
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IS43R83200B-6TL-TR
1266-IS43R83200B-6TL-TR
存储器
66-TSSOP (0.400, 10.16mm Width)
大陆
立即发货

IC DRAM 256M PARALLEL 66TSOP II
1最小包装量--
IS43R83200B-6TL-TR详情
ISSI, Integrated Silicon Solution Inc IS43R83200B-6TL-TR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
66-TSSOP (0.400, 10.16mm Width)
引脚数
66
Memory Types
Volatile
包装
Tape & Reel (TR)
操作温度
0°C~70°C TA
零件状态
Obsolete
湿度敏感性等级(MSL)
2 (1 Year)
电压 - 供电
2.3V~2.7V
内存大小
256Mb 32M x 8
时钟频率
166MHz
访问时间
700ps
内存格式
DRAM
内存接口
Parallel
数据总线宽度
8b
写入周期时间 - 字符、页面
15ns
RoHS状态
符合RoHS标准
IS43R83200B-6TL-TR拓展信息
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc







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