ISSI, Integrated Silicon Solution Inc IS61WV5128EDBLL-10BLI-TR
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IS61WV5128EDBLL-10BLI-TR
1266-IS61WV5128EDBLL-10BLI-TR
存储器
36-TFBGA
大陆
立即发货

SRAM 4Mb, 2.4v-3.6v, 10ns 512K x 8 Async SRAM
1最小包装量--
IS61WV5128EDBLL-10BLI-TR详情
ISSI, Integrated Silicon Solution Inc IS61WV5128EDBLL-10BLI-TR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
8 Weeks
安装类型
表面贴装
包装/外壳
36-TFBGA
引脚数
36
供应商器件包装
36-TFBGA (6x8)
Memory Types
Volatile
操作温度
-40°C~85°C TA
包装
Tape & Reel (TR)
零件状态
活跃
湿度敏感性等级(MSL)
3 (168 Hours)
最高工作温度
85°C
最小工作温度
-40°C
电压 - 供电
2.4V~3.6V
界面
Parallel
内存大小
4Mb 512K x 8
访问时间
10ns
内存格式
SRAM
内存接口
Parallel
写入周期时间 - 字符、页面
10ns
电压 - 供电 (最大值)
3.6V
电压 - 供电 (最小值)
2.4V
RoHS状态
ROHS3 Compliant
IS61WV5128EDBLL-10BLI-TR拓展信息
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc







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