ISSI, Integrated Silicon Solution Inc IS66WVE2M16EBLL-70BLI-TR
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IS66WVE2M16EBLL-70BLI-TR
1266-IS66WVE2M16EBLL-70BLI-TR
存储器
48-TFBGA
大陆
立即发货

SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V~3.6V, VDDQ 2.7V~3.6V,48 Ball BGA (6x8 mm), RoHS
1最小包装量--
IS66WVE2M16EBLL-70BLI-TR详情
ISSI, Integrated Silicon Solution Inc IS66WVE2M16EBLL-70BLI-TR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
10 Weeks
安装类型
表面贴装
包装/外壳
48-TFBGA
Memory Types
Volatile
操作温度
-40°C~85°C TA
包装
Tape & Reel (TR)
零件状态
活跃
湿度敏感性等级(MSL)
3 (168 Hours)
电压 - 供电
2.7V~3.6V
内存大小
32Mb 2M x 16
内存格式
PSRAM
内存接口
Parallel
写入周期时间 - 字符、页面
70ns
RoHS状态
ROHS3 Compliant
IS66WVE2M16EBLL-70BLI-TR拓展信息
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc







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