ITT CB2-20-8PS-M4

包装/外壳

Macro-X

触点镀层

Silver

终端数量

6

Emitter- Base Voltage VEBO

2.5 V

Pd - Power Dissipation

1.25 W

Transistor Polarity

NPN

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

90

Unit Weight

0.003527 oz

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

SMD/SMT

Manufacturer

Advanced Semiconductor, Inc.

Brand

Advanced Semiconductor, Inc.

RoHS

Details

Collector- Emitter Voltage VCEO Max

15 V

Body Orientation

Straight

Voltage, Rating

250VDC/200VAC

Product Depth (mm)

38(mm)

Shell Size / Insert Arrangement

20-8

Operating Temp Range

-55C to 125C

Termination Method

Solder

Product Diameter (mm)

Not Required(mm)

Contact Materials

Copper Alloy

Rad Hardened

无

Contact Classification

(2/4)Signal

包装

Tray

类型

射频双极小信号

性别

RCP

子类别

Transistors

技术

Si

接头数量

6(POS)

触点性别

PIN

工作频率

1 GHz

端口的数量

1(Port)

家人

CB

产品类别

射频双极晶体管

晶体管类型

Bipolar

最大额定电流

74/22(A)

连续集电极电流

200 mA

产品类别

射频双极晶体管

应力消除

无

产品长度(mm)

33.8(mm)

产品高度(mm)

38(mm)