ITT CB6-24-7PC

包装/外壳

TO-18-3

Vds - Drain-Source Breakdown Voltage

40 V

Pd - Power Dissipation

1.8 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

2000

Drain-Source Current at Vgs=0

30 mA

Mounting Styles

通孔

Manufacturer

Central Semiconductor

Brand

Central Semiconductor

Rds On - Drain-Source Resistance

100 Ohms

Maximum Drain Gate Voltage

40 V

RoHS

N

Vgs - Gate-Source Breakdown Voltage

40 V

Gate-Source Cutoff Voltage

3 V

Id - Continuous Drain Current

50 mA

系列

2N4393

包装

Bulk

子类别

Transistors

技术

Si

配置

Single

产品类别

JFETs

产品类别

JFET