CDR31BP4R3BBMR详情
KYOCERA CDR31BP4R3BBMR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-252AA-3
Vds - Drain-Source Breakdown Voltage
30 V
Typical Turn-On Delay Time
5 ns
Vgs th - Gate-Source Threshold Voltage
2.5 V
Pd - Power Dissipation
55 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Unit Weight
0.010476 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
Panjit
Brand
Panjit
Qg - Gate Charge
12 nC
Rds On - Drain-Source Resistance
9 mOhms
RoHS
Details
Typical Turn-Off Delay Time
36 ns
Id - Continuous Drain Current
80 A
Package
Bulk
厂商
KYOCERA AVX
Product Status
活跃
系列
NFET-30SMN
包装
MouseReel
子类别
MOSFETs
技术
Si
配置
Single
通道数量
1 Channel
上升时间
42 ns
产品类别
MOSFET
晶体管类型
1 N-Channel
产品类别
MOSFET
CDR31BP4R3BBMR拓展信息
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哦! 它是空的。