Littelfuse IXBT2N250-TR
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IXBT2N250-TR
1475-IXBT2N250-TR
晶体管 - IGBT - 单个
TO-268-3
大陆
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IXBT2N250-TR datasheet pdf and Transistors - IGBTs - Single product details from Littelfuse stock available at utmel
1最小包装量--
IXBT2N250-TR详情
Littelfuse IXBT2N250-TR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-268-3
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
无
PPAP
无
Maximum Gate Emitter Voltage (V)
±20
Maximum Collector-Emitter Voltage (V)
2500
Typical Collector Emitter Saturation Voltage (V)
3.15
Maximum Continuous Collector Current (A)
5
Maximum Gate Emitter Leakage Current (uA)
0.1
Maximum Power Dissipation (mW)
32
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
表面贴装
Package Height
5.1(Max)
Package Width
14(Max)
Package Length
16.05(Max)
PCB changed
2
Tab
Tab
Supplier Package
TO-268
Vds - Drain-Source Breakdown Voltage
2.5 kV
Vgs th - Gate-Source Threshold Voltage
3 V
Pd - Power Dissipation
32 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Qg - Gate Charge
10.6 nC
Id - Continuous Drain Current
5 A
包装
卷带
零件状态
活跃
技术
Si
引脚数量
3
配置
Single
通道数量
1 Channel
信道型
N
IXBT2N250-TR拓展信息
Littelfuse Inc.
Littelfuse Inc.
Littelfuse Inc.
Littelfuse Inc.
Littelfuse Inc.
Littelfuse Inc.
Littelfuse Inc.
Littelfuse Inc.
Littelfuse Inc.
Littelfuse







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