Littelfuse IXTF1N250

包装/外壳

ISOPLUS-i4-PAK-3

Vds - Drain-Source Breakdown Voltage

2.5 kV

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

110 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Channel Mode

Enhancement

Qg - Gate Charge

41 nC

Rds On - Drain-Source Resistance

40 Ohms

Id - Continuous Drain Current

1 A

系列

IXTF1N250

技术

Si

通道数量

1 Channel