Littelfuse IXXN110N65B4H1
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IXXN110N65B4H1
1475-IXXN110N65B4H1
晶体管 - IGBT - 单个
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IXXN110N65B4H1 datasheet pdf and Transistors - IGBTs - Single product details from Littelfuse stock available at utmel
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IXXN110N65B4H1详情
Littelfuse IXXN110N65B4H1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
EU RoHS
符合免除
ECCN (US)
EAR99
Automotive
无
PPAP
无
Maximum Gate Emitter Voltage (V)
±20
Maximum Collector-Emitter Voltage (V)
650
Typical Collector Emitter Saturation Voltage (V)
1.72
Maximum Continuous Collector Current (A)
200
Maximum Gate Emitter Leakage Current (uA)
0.1
Maximum Power Dissipation (mW)
750
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Mounting
Screw
Package Width
25.42(Max)
Package Length
38.23(Max)
PCB changed
4
Standard Package Name
SOT
Supplier Package
SOT-227B
Lead Shape
Screw
Collector-Emitter Saturation Voltage
1.72V
零件状态
活跃
引脚数量
4
配置
单双发射器
功率耗散
750W
信道型
N
连续集电极电流
230A
IXXN110N65B4H1拓展信息
Littelfuse Inc.
Littelfuse Inc.
Littelfuse Inc.
Littelfuse Inc.
Littelfuse Inc.
Littelfuse Inc.
Littelfuse Inc.
Littelfuse Inc.
Littelfuse Inc.
Littelfuse







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