MDD(Microdiode Semiconductor) MDD50N06D
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MDD50N06D
2817-MDD50N06D
晶体管 - FET,MOSFET - 单个
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60V 50A 62.5W 12mΩ@10V,20A 1.8V@250uA 1 N-Channel TO-252 MOSFETs ROHS
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MDD50N06D详情
MDD(Microdiode Semiconductor) MDD50N06D重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Drain Source Voltage (Vdss)
60V
Power Dissipation (Pd)
62.5W
Drain Source On Resistance (RDS(on)@Vgs,Id)
12mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)@Id)
1.8V@250uA
Reverse Transfer Capacitance (Crss@Vds)
92pF@30V
Input Capacitance (Ciss@Vds)
1.889nF@30V
Total Gate Charge (Qg@Vgs)
40nC@10V
类型
1 N-Channel
Continuous Drain Current (Id)
50A
MDD50N06D拓展信息
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MDD(Microdiode Semiconductor)
MDD(Microdiode Semiconductor)
MDD(Microdiode Semiconductor)
MDD(Microdiode Semiconductor)








哦! 它是空的。