Microchip 2N5152

安装类型

通孔

包装/外壳

TO-205AD, TO-39-3 Metal Can

供应商器件包装

TO-39

Package

Bulk

厂商

PEI-Genesis

Product Status

活跃

Current-Collector (Ic) (Max)

2 A

Base Product Number

2N5152

Emitter- Base Voltage VEBO

5.5 V

Pd - Power Dissipation

1 W

Transistor Polarity

NPN

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

30 at 2.5 A, 5 VDC

Collector-Emitter Saturation Voltage

750 mV

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

通孔

Gain Bandwidth Product fT

-

Manufacturer

Microchip

Brand

微芯片技术

Maximum DC Collector Current

2 A

DC Current Gain hFE Max

90 at 2.5 A, 5 VDC

RoHS

N

Collector- Emitter Voltage VCEO Max

80 V

Package Description

,

Manufacturer Part Number

2N5152

Part Life Cycle Code

Transferred

Ihs Manufacturer

AEROFLEX/METELICS INC

Risk Rank

5.11

系列

*

操作温度

-65°C ~ 200°C (TJ)

包装

Bulk

子类别

Transistors

技术

Si

Reach合规守则

unknown

配置

Single

功率 - 最大

1 W

产品类别

BJTs - Bipolar Transistors

晶体管类型

NPN

最小直流增益（hFE）@ Ic, Vce

30 @ 2.5A, 5V

最大集极截止电流

50µA

不同 Ib, Ic 时 Vce 饱和度（最大值）

1.5V @ 500mA, 5A

电压 - 集射极击穿（最大值）

80 V

频率转换

-

集电极基极电压(VCBO)

100 V

产品类别

Bipolar Transistors - BJT