Microchip APL501J

表面安装

NO

包装/外壳

ISOTOP-4

终端数量

4

晶体管元件材料

SILICON

Manufacturer Part Number

APL501J

Rohs Code

有

Part Life Cycle Code

活跃

Ihs Manufacturer

MICROSEMI CORP

Part Package Code

ISOTOP

Package Description

FLANGE MOUNT, R-PUFM-X4

Manufacturer Package Code

ISOTOP

Risk Rank

5.35

Drain Current-Max (ID)

43 A

Number of Elements

1

Operating Temperature-Max

150 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

FLANGE MOUNT

Reflow Temperature-Max (s)

未说明

Vds - Drain-Source Breakdown Voltage

500 V

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

520 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

2.264236 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Brand

微芯片技术

Rds On - Drain-Source Resistance

120 mOhms

RoHS

Details

Id - Continuous Drain Current

43 A

包装

Tube

JESD-609代码

e1

无铅代码

有

ECCN 代码

EAR99

端子表面处理

Tin/Silver/Copper (Sn/Ag/Cu)

附加功能

UL 认证

技术

Si

端子位置

UPPER

终端形式

UNSPECIFIED

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

引脚数量

4

JESD-30代码

R-PUFM-X4

资历状况

不合格

配置

SINGLE WITH BUILT-IN DIODE

通道数量

1 Channel

操作模式

增强型MOSFET

箱体转运

ISOLATED

极性/通道类型

N-CHANNEL

产品类别

MOSFET

最大漏极电流 (Abs) (ID)

43 A

漏极-源极导通最大电阻

0.12 Ω

脉冲漏极电流-最大值(IDM)

172 A

DS 击穿电压-最小值

500 V

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

520 W

产品类别

MOSFET