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价格梯度
内地含税价
1
¥499.800313
10
¥471.509731
100
¥444.820502
500
¥419.641983
1000
¥395.88866
APT40M35JVR详情
Microchip APT40M35JVR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
SOT-227-4
安装类型
底座安装
供应商器件包装
SOT-227 (ISOTOP®)
Vds - Drain-Source Breakdown Voltage
400 V
Typical Turn-On Delay Time
20 ns
Vgs th - Gate-Source Threshold Voltage
2 V
Pd - Power Dissipation
700 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
1
Mounting Styles
螺钉安装
Manufacturer
Microchip
Brand
Microchip Technology / Atmel
Rds On - Drain-Source Resistance
35 mOhms
RoHS
Details
Typical Turn-Off Delay Time
75 ns
Id - Continuous Drain Current
93 A
Package
Tube
Base Product Number
APT40
Current - Continuous Drain (Id) @ 25℃
93A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
厂商
微芯片技术
Power Dissipation (Max)
700W (Tc)
Product Status
活跃
包装
Tube
操作温度
-55°C ~ 150°C (TJ)
系列
POWER MOS V®
类型
MOSFET
子类别
Discrete Semiconductor Modules
技术
Si
配置
Single
通道数量
1 Channel
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
35mOhm @ 46.5A, 10V
不同 Id 时 Vgs(th)(最大值)
4V @ 5mA
输入电容(Ciss)(Max)@Vds
20160 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
1065 nC @ 10 V
上升时间
30 ns
漏源电压 (Vdss)
400 V
Vgs(最大值)
±30V
产品类别
Discrete Semiconductor Modules
场效应管特性
-
产品
功率MOSFET模块
产品类别
Discrete Semiconductor Modules
APT40M35JVR拓展信息







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