Microchip JAN2N2906A

安装类型

通孔

包装/外壳

TO-206AA, TO-18-3 Metal Can

供应商器件包装

TO-18

Transistor Polarity

PNP

Package

Bulk

Current-Collector (Ic) (Max)

600 mA

Base Product Number

2N2906

厂商

微芯片技术

Product Status

活跃

Emitter- Base Voltage VEBO

5 V

Pd - Power Dissipation

500 mW

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

40 at 1mA, 10 VDC

Collector-Emitter Saturation Voltage

400 mV

Unit Weight

0.135364 oz

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

通孔

Gain Bandwidth Product fT

-

Manufacturer

Microchip

Brand

Microchip / Microsemi

Maximum DC Collector Current

600 mA

DC Current Gain hFE Max

175 at 1 mA, 10 VDC

RoHS

N

Collector- Emitter Voltage VCEO Max

60 V

操作温度

-65°C ~ 200°C (TJ)

系列

Military, MIL-PRF-19500/291

包装

Bulk

子类别

Transistors

技术

Si

配置

Single

功率 - 最大

500 mW

产品类别

BJTs - Bipolar Transistors

晶体管类型

PNP

最小直流增益（hFE）@ Ic, Vce

40 @ 150mA, 10V

最大集极截止电流

50nA

不同 Ib, Ic 时 Vce 饱和度（最大值）

1.6V @ 50mA, 500mA

电压 - 集射极击穿（最大值）

60 V

频率转换

-

集电极基极电压(VCBO)

60 V

连续集电极电流

600

产品类别

Bipolar Transistors - BJT