Jan2N4399详情
Microchip Jan2N4399重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-3-2
安装类型
通孔
供应商器件包装
TO-3 (TO-204AA)
Package
Bulk
Base Product Number
033482
厂商
Molex
Product Status
活跃
Emitter- Base Voltage VEBO
5 V
Pd - Power Dissipation
5 W
Transistor Polarity
PNP
Maximum Operating Temperature
+ 200 C
DC Collector/Base Gain hfe Min
40
Collector-Emitter Saturation Voltage
1 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
1
Mounting Styles
通孔
Gain Bandwidth Product fT
-
Manufacturer
Microchip
Brand
Microchip / Microsemi
DC Current Gain hFE Max
250
RoHS
N
Collector- Emitter Voltage VCEO Max
60 V
Current-Collector (Ic) (Max)
30 A
系列
*
包装
Tray
操作温度
-55°C ~ 200°C (TJ)
子类别
Transistors
技术
Si
配置
Single
功率 - 最大
5 W
产品类别
BJTs - Bipolar Transistors
晶体管类型
PNP
最小直流增益(hFE)@ Ic, Vce
15 @ 15A, 2V
最大集极截止电流
100µA
不同 Ib, Ic 时 Vce 饱和度(最大值)
750mV @ 1A, 10A
电压 - 集射极击穿(最大值)
60 V
频率转换
-
集电极基极电压(VCBO)
60 V
连续集电极电流
30 A
产品类别
Bipolar Transistors - BJT
Jan2N4399拓展信息
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
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