JANSR2N2221AUB详情
Microchip JANSR2N2221AUB重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
包装/外壳
UBC-3
终端数量
3
晶体管元件材料
SILICON
Manufacturer Part Number
JANSR2N2221AUB
Rohs Code
无
Part Life Cycle Code
活跃
Ihs Manufacturer
MICROSEMI CORP
Package Description
SMALL OUTLINE, R-CDSO-N3
Risk Rank
5.36
Number of Elements
1
Operating Temperature-Max
200 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
Package Style
小概要
Turn-off Time-Max (toff)
300 ns
Turn-on Time-Max (ton)
35 ns
Emitter- Base Voltage VEBO
6 V
Pd - Power Dissipation
500 mW
Transistor Polarity
NPN
Maximum Operating Temperature
+ 200 C
DC Collector/Base Gain hfe Min
35
Collector-Emitter Saturation Voltage
1 V
Minimum Operating Temperature
- 65 C
Mounting Styles
SMD/SMT
Collector- Emitter Voltage VCEO Max
50 V
无铅代码
无
ECCN 代码
EAR99
HTS代码
8541.21.00.95
技术
Si
端子位置
DUAL
终端形式
无铅
Reach合规守则
compliant
参考标准
MIL-19500/255
JESD-30代码
R-CDSO-N3
资历状况
Qualified
配置
SINGLE
晶体管应用
SWITCHING
极性/通道类型
NPN
集电极基极电压(VCBO)
75 V
集电极电流-最大值(IC)
0.8 A
最小直流增益(hFE)
20
集电极-发射器电压-最大值
50 V
JANSR2N2221AUB拓展信息
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