JANTX2N2218A详情
Microchip JANTX2N2218A重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-205AD, TO-39-3 Metal Can
供应商器件包装
TO-39 (TO-205AD)
Manufacturer Part Number
P4701Z2110002
Manufacturer
West Control Solutions
Emitter- Base Voltage VEBO
6 V
Pd - Power Dissipation
800 mW
Transistor Polarity
NPN
Maximum Operating Temperature
+ 200 C
Collector-Emitter Saturation Voltage
300 mV
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
1
Mounting Styles
通孔
Gain Bandwidth Product fT
-
Brand
Microchip / Microsemi
Maximum DC Collector Current
800 mA
RoHS
N
Collector- Emitter Voltage VCEO Max
50 V
Package
Bulk
Current-Collector (Ic) (Max)
800 mA
Base Product Number
2N2218
厂商
微芯片技术
Product Status
活跃
包装
Bulk
操作温度
-55°C ~ 200°C (TJ)
系列
Military, MIL-PRF-19500/251
子类别
Transistors
技术
Si
配置
Single
功率 - 最大
800 mW
产品类别
BJTs - Bipolar Transistors
晶体管类型
NPN
最小直流增益(hFE)@ Ic, Vce
40 @ 150mA, 10V
最大集极截止电流
10nA
不同 Ib, Ic 时 Vce 饱和度(最大值)
1V @ 50mA, 500mA
电压 - 集射极击穿(最大值)
50 V
频率转换
-
集电极基极电压(VCBO)
75 V
产品类别
Bipolar Transistors - BJT
JANTX2N2218A拓展信息
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