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价格梯度
内地含税价
1
¥63.353873
10
¥59.767803
100
¥56.384718
500
¥53.193131
1000
¥50.182201
MSC035SMA070S详情
Microchip MSC035SMA070S重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
生命周期状态
Production (Last Updated: 9 months ago)
安装类型
表面贴装
包装/外壳
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
供应商器件包装
D3PAK
Continuous Drain Current Id
65
Package
Tube
Base Product Number
MSC035
Current - Continuous Drain (Id) @ 25℃
65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
厂商
微芯片技术
Power Dissipation (Max)
206W (Tc)
Product Status
活跃
Vds - Drain-Source Breakdown Voltage
700 V
Vgs th - Gate-Source Threshold Voltage
1.9 V
Pd - Power Dissipation
206 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 10 V, + 23 V
Unit Weight
0.218699 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
1
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
Microchip
Brand
Microchip Technology / Atmel
Qg - Gate Charge
99 nC
Rds On - Drain-Source Resistance
44 mOhms
RoHS
Details
Id - Continuous Drain Current
65 A
操作温度
-55°C ~ 175°C (TJ)
系列
-
包装
Tube
子类别
MOSFETs
技术
SiCFET (Silicon Carbide)
配置
Single
通道数量
1 Channel
功率耗散
206
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
44mOhm @ 30A, 20V
不同 Id 时 Vgs(th)(最大值)
2.7V @ 1mA
输入电容(Ciss)(Max)@Vds
2010 pF @ 700 V
门极电荷(Qg)(最大)@Vgs
99 nC @ 20 V
漏源电压 (Vdss)
700 V
Vgs(最大值)
+23V, -10V
产品类别
MOSFET
信道型
N通道
场效应管特性
-
产品类别
MOSFET
MSC035SMA070S拓展信息
Microchip
Microchip
Microchip
Microchip
Microchip
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