Microchip MSC100SM70JCU2

包装/外壳

SOT-227

安装类型

底座安装

供应商器件包装

SOT-227 (ISOTOP®)

Vr - Reverse Voltage

700 V

Vds - Drain-Source Breakdown Voltage

700 V

Typical Turn-On Delay Time

40 ns

Vgs th - Gate-Source Threshold Voltage

1.9 V

Pd - Power Dissipation

365 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 10 V, + 25 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

螺钉安装

Manufacturer

Microchip

Brand

微芯片技术

Rds On - Drain-Source Resistance

19 mOhms

RoHS

Details

Typical Turn-Off Delay Time

50 ns

Id - Continuous Drain Current

124 A

Package

Tube

Base Product Number

MSC100SM70JCU2

Current - Continuous Drain (Id) @ 25℃

124A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

厂商

微芯片技术

Power Dissipation (Max)

365W (Tc)

Product Status

活跃

包装

Bulk

操作温度

-55°C ~ 150°C (TJ)

系列

-

类型

升压斩波器

子类别

Discrete Semiconductor Modules

技术

SiC

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

19mOhm @ 40A, 20V

不同 Id 时 Vgs(th)（最大值）

2.4V @ 4mA

输入电容(Ciss)(Max)@Vds

4500 pF @ 700 V

门极电荷(Qg)(最大)@Vgs

215 nC @ 20 V

上升时间

35 ns

漏源电压 (Vdss)

700 V

Vgs（最大值）

+25V, -10V

产品类别

Discrete Semiconductor Modules

场效应管特性

-

产品

IGBT碳化硅模块

Vf-正向电压

1.5 V

产品类别

Discrete Semiconductor Modules