Microchip MSCSM120DAM11CT3AG

包装/外壳

SP3F

安装类型

底座安装

Vr - Reverse Voltage

1200 V

Vds - Drain-Source Breakdown Voltage

1200 V

Typical Turn-On Delay Time

30 ns

Vgs th - Gate-Source Threshold Voltage

1.8 V

Pd - Power Dissipation

1067 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 125 C

Vgs - Gate-Source Voltage

- 10 V, + 25 V

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

螺钉安装

Manufacturer

Microchip

Brand

Microchip Technology / Atmel

Rds On - Drain-Source Resistance

10.4 mOhms

RoHS

Details

Typical Turn-Off Delay Time

50 ns

Id - Continuous Drain Current

254 A

Package

Tube

Base Product Number

MSCSM120

厂商

微芯片技术

Product Status

活跃

包装

Bulk

系列

-

类型

升压斩波器

子类别

Discrete Semiconductor Modules

技术

SiC

电压-隔离度

4000Vrms

配置

1 Phase

电压

1.2 kV

电流

254 A

上升时间

30 ns

产品类别

Discrete Semiconductor Modules

产品

功率MOSFET模块

Vf-正向电压

1.5 V at 180 A

产品类别

Discrete Semiconductor Modules