Microchip MSCSM120VR1M16CT3AG

安装类型

底座安装

包装/外壳

Module

供应商器件包装

-

Package

Bulk

Base Product Number

MSCSM120

Current - Continuous Drain (Id) @ 25℃

173A (Tc)

厂商

微芯片技术

Product Status

活跃

Vr - Reverse Voltage

1700 V

Vds - Drain-Source Breakdown Voltage

1200 V

Vgs th - Gate-Source Threshold Voltage

2.8 V

Pd - Power Dissipation

745 W

Maximum Operating Temperature

+ 125 C

Vgs - Gate-Source Voltage

- 10 V, + 23 V

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

螺钉安装

Manufacturer

Microchip

Brand

微芯片技术

Rds On - Drain-Source Resistance

16 mOhms

RoHS

Details

Id - Continuous Drain Current

173 A

操作温度

-40°C ~ 175°C (TJ)

系列

-

类型

MOSFET Power Module

子类别

Discrete Semiconductor Modules

技术

Silicon Carbide (SiC)

配置

2 N Channel (Phase Leg)

功率 - 最大

745W (Tc)

Rds On(Max)@Id,Vgs

16mOhm @ 80A, 20V

不同 Id 时 Vgs(th)（最大值）

2.8V @ 6mA

输入电容(Ciss)(Max)@Vds

6040pF @ 1000V

门极电荷(Qg)(最大)@Vgs

464nC @ 20V

漏源电压 (Vdss)

1200V (1.2kV)

产品类别

Discrete Semiconductor Modules

场效应管特性

-

产品

Rectifier Modules

Vf-正向电压

1.8 V

产品类别

Discrete Semiconductor Modules