注:图像仅供参考,请参阅产品规格
技术文档

价格梯度
内地含税价
1
¥1891.007604
10
¥1783.96944
100
¥1682.990034
500
¥1587.726453
1000
¥1497.85514
MSCSM70AM07CT3AG详情
Microchip MSCSM70AM07CT3AG重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
SP3F
安装类型
底座安装
供应商器件包装
SP3F
Vr - Reverse Voltage
700 V
Vds - Drain-Source Breakdown Voltage
700 V
Typical Turn-On Delay Time
40 ns
Vgs th - Gate-Source Threshold Voltage
1.9 V
Pd - Power Dissipation
988 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 125 C
Vgs - Gate-Source Voltage
- 10 V, + 25 V
Minimum Operating Temperature
- 40 C
Factory Pack QuantityFactory Pack Quantity
1
Mounting Styles
螺钉安装
Manufacturer
Microchip
Brand
Microchip Technology / Atmel
Rds On - Drain-Source Resistance
6.4 mOhms
RoHS
Details
Typical Turn-Off Delay Time
50 ns
Id - Continuous Drain Current
353 A
Package
Tube
Base Product Number
MSCSM70
Current - Continuous Drain (Id) @ 25℃
353A (Tc)
厂商
微芯片技术
Product Status
活跃
包装
Bulk
操作温度
-40°C ~ 175°C (TJ)
系列
-
类型
Phase Leg
子类别
Discrete Semiconductor Modules
技术
SiC
配置
Dual
功率 - 最大
988W (Tc)
场效应管类型
2 N Channel (Phase Leg)
Rds On(Max)@Id,Vgs
6.4mOhm @ 120A, 20V
不同 Id 时 Vgs(th)(最大值)
2.4V @ 12mA
输入电容(Ciss)(Max)@Vds
13500pF @ 700V
门极电荷(Qg)(最大)@Vgs
645nC @ 20V
上升时间
35 ns
漏源电压 (Vdss)
700V
产品类别
Discrete Semiconductor Modules
场效应管特性
Silicon Carbide (SiC)
产品
功率MOSFET模块
Vf-正向电压
1.5 V at 150 A
产品类别
Discrete Semiconductor Modules
MSCSM70AM07CT3AG拓展信息







哦! 它是空的。