Microchip Technology APT30SCD65B

包装/外壳

TO-247-2

表面安装

NO

二极管元件材料

碳化硅

终端数量

2

RoHS

Details

Mounting Styles

通孔

If - Forward Current

30 A

Vrrm - Repetitive Reverse Voltage

650 V

Ifsm - Forward Surge Current

247 A

Ir - Reverse Current

600 uA

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

156 W

Factory Pack QuantityFactory Pack Quantity

1

Unit Weight

0.229281 oz

Vr - Reverse Voltage

650 V

Package Description

R-PSFM-T2

Package Style

FLANGE MOUNT

Package Body Material

PLASTIC/EPOXY

Operating Temperature-Min

-55 °C

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

APT30SCD65B

Power Dissipation (Max)

156 W

Package Shape

RECTANGULAR

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

MICROSEMI CORP

Forward Voltage-Max (VF)

1.8 V

Risk Rank

5.81

包装

Tube

ECCN 代码

EAR99

类型

碳化硅肖特基二极管

应用

GENERAL PURPOSE

附加功能

HIGH RELIABILITY, LOW LEAKAGE CURRENT, PD-CASE

HTS代码

8541.10.00.80

端子位置

SINGLE

终端形式

THROUGH-HOLE

Reach合规守则

compliant

JESD-30代码

R-PSFM-T2

配置

Single

二极管类型

接收电极

箱体转运

CATHODE

输出电流-最大值

46 A

相位的数量

1

Rep Pk反向电压-最大值

650 V

JEDEC-95代码

TO-247

最大非代表Pk前进电流

247 A

反向电流-最大值

600 µA

产品

肖特基碳化硅二极管

Vf-正向电压

1.8 V