Microchip Technology JANSR2N3501U4/TR

安装类型

-

包装/外壳

-

供应商器件包装

-

厂商

微芯片技术

Package

Tape & Reel (TR)

Product Status

活跃

Emitter- Base Voltage VEBO

6 V

Pd - Power Dissipation

1 W

Transistor Polarity

NPN

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

20 at 300mA, 10 V

Collector-Emitter Saturation Voltage

400 mV

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

SMD/SMT

Manufacturer

Microchip

Brand

Microchip / Microsemi

Maximum DC Collector Current

300 mA

DC Current Gain hFE Max

300 at 150 mA, 10 V

RoHS

N

Collector- Emitter Voltage VCEO Max

150 V

系列

-

操作温度

-

包装

Reel

子类别

Transistors

技术

Si

配置

Single

产品类别

BJTs - Bipolar Transistors

晶体管类型

-

最小直流增益（hFE）@ Ic, Vce

-

最大集极截止电流

-

不同 Ib, Ic 时 Vce 饱和度（最大值）

-

频率转换

-

集电极基极电压(VCBO)

150 V

产品类别

Bipolar Transistors - BJT