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¥228.141316
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¥215.227655
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¥203.044959
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¥191.551848
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¥180.709293
Microchip Technology JANTX2N4033UB/TR
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JANTX2N4033UB/TR
1610-JANTX2N4033UB/TR
晶体管 - 双极性晶体管(BJT)- 单个
TO-205AD, TO-39-3 Metal Can
大陆
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TRANS PNP 80V 1A TO39
--最小包装量--
¥
总价: ¥
JANTX2N4033UB/TR详情
Microchip Technology JANTX2N4033UB/TR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-205AD, TO-39-3 Metal Can
供应商器件包装
TO-39 (TO-205AD)
厂商
微芯片技术
Package
Tape & Reel (TR)
Product Status
活跃
Current-Collector (Ic) (Max)
1 A
Emitter- Base Voltage VEBO
5 V
Pd - Power Dissipation
500 mW
Transistor Polarity
PNP
Maximum Operating Temperature
+ 200 C
DC Collector/Base Gain hfe Min
25 at 1 A, 5 V
Collector-Emitter Saturation Voltage
1 V
Minimum Operating Temperature
- 65 C
Factory Pack QuantityFactory Pack Quantity
1
Mounting Styles
SMD/SMT
Manufacturer
Microchip
Brand
Microchip / Microsemi
Maximum DC Collector Current
1 A
DC Current Gain hFE Max
300 at 100 mA, 5 V
RoHS
N
Collector- Emitter Voltage VCEO Max
80 V
系列
Military, MIL-PRF-19500/512
操作温度
-55°C ~ 200°C (TJ)
子类别
Transistors
技术
Si
配置
Single
功率 - 最大
500 mW
产品类别
BJTs - Bipolar Transistors
晶体管类型
PNP
最小直流增益(hFE)@ Ic, Vce
100 @ 100mA, 5V
最大集极截止电流
10μA (ICBO)
不同 Ib, Ic 时 Vce 饱和度(最大值)
1V @ 100mA, 1A
电压 - 集射极击穿(最大值)
80 V
频率转换
-
集电极基极电压(VCBO)
80 V
产品类别
Bipolar Transistors - BJT
JANTX2N4033UB/TR拓展信息
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