Micron Technology MT18HTS25672PKY-667G1
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MT18HTS25672PKY-667G1
1616-MT18HTS25672PKY-667G1
存储器
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DRAM Module DDR2 SDRAM 2Gbyte 244MiniRDIMM Tray (Alt: MT18HTS25672PKY-667G1)
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MT18HTS25672PKY-667G1详情
Micron Technology MT18HTS25672PKY-667G1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
终端数量
244
Package Description
DIMM, DIMM244,24
Package Style
微电子组件
Number of Words Code
256000000
Package Body Material
PLASTIC/EPOXY
Package Equivalence Code
DIMM244,24
Access Time-Max
0.45 ns
Operating Temperature-Max
70 °C
Rohs Code
有
Manufacturer Part Number
MT18HTS25672PKY-667G1
Clock Frequency-Max (fCLK)
333 MHz
Number of Words
268435456 words
Supply Voltage-Nom (Vsup)
1.8 V
Package Code
DIMM
Package Shape
RECTANGULAR
Manufacturer
Micron Technology Inc
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MICRON TECHNOLOGY INC
Risk Rank
5.84
子类别
其他存储器集成电路
技术
CMOS
端子位置
DUAL
终端形式
无铅
端子间距
0.6 mm
Reach合规守则
unknown
JESD-30代码
R-PDMA-N244
资历状况
不合格
电源
1.8 V
温度等级
COMMERCIAL
电源电流-最大值
2.808 mA
组织结构
256MX72
输出特性
3-STATE
内存宽度
72
记忆密度
19327352832 bit
I/O类型
COMMON
刷新周期
8192
MT18HTS25672PKY-667G1拓展信息
Micron Technology Inc.
Micron Technology Inc.
Micron Technology Inc.
Micron Technology Inc.
Micron Technology Inc.
Micron Technology Inc.
Micron Technology Inc.
Micron
Micron Technology Inc.
Micron Technology Inc.







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