Micron Technology MT18HTS51272RHY-667A1
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MT18HTS51272RHY-667A1
1616-MT18HTS51272RHY-667A1
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DRAM Module DDR2 SDRAM 4Gbyte 200SORDIMM Tray
1最小包装量--
MT18HTS51272RHY-667A1详情
Micron Technology MT18HTS51272RHY-667A1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
底架
Socket
引脚数
200
ECCN (US)
EAR99
Module
DRAM模块
Module Density
4Gbyte
Number of Chip per Module
18
Chip Density (bit)
4G(TwinDie)
Data Bus Width (bit)
72
Maximum Clock Rate (MHz)
667
Chip Configuration
512Mx8
Minimum Operating Supply Voltage (V)
1.7
Typical Operating Supply Voltage (V)
1.8
Maximum Operating Supply Voltage (V)
1.9
Operating Current (mA)
1647
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
70
Supplier Temperature Grade
Commercial
Module Sides
Double
ECC Support
有
Number of Ranks
Dual
Number of Chip Banks
8
CAS Latency
5
PC Type
PC2-5300
SPD EEPROM Support
有
Standard Package Name
DIM
Supplier Package
SORDIMM
Mounting
Socket
Package Height
30.15(Max)
Package Length
67.75(Max)
Package Width
3.8(Max)
PCB changed
200
Lead Shape
No Lead
Number of Elements
18
RoHS
Compliant
包装
Tray
零件状态
Obsolete
最高工作温度
70 °C
最小工作温度
0 °C
引脚数量
200
工作电源电压
1.8 V
最大电源电压
1.9 V
最小电源电压
1.7 V
组织结构
512Mx72
最高频率
667 MHz
锁相环
有
刷新周期
8K
自我刷新
有
模块类型
200SORDIMM
RoHS状态
是,有豁免
MT18HTS51272RHY-667A1拓展信息
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