Micron Technology MT36JBZS51272PY-1G4D1
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MT36JBZS51272PY-1G4D1
1616-MT36JBZS51272PY-1G4D1
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DRAM Module DDR3 SDRAM 4Gbyte 240RDIMM Tray
1最小包装量--
MT36JBZS51272PY-1G4D1详情
Micron Technology MT36JBZS51272PY-1G4D1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
底架
Socket
引脚数
240
ECCN (US)
EAR99
Module
DRAM模块
Module Density
4Gbyte
Number of Chip per Module
36
Chip Density (bit)
2G(TwinDie)
Data Bus Width (bit)
72
Maximum Clock Rate (MHz)
1333
Chip Configuration
512Mx4
Minimum Operating Supply Voltage (V)
1.425
Typical Operating Supply Voltage (V)
1.5
Maximum Operating Supply Voltage (V)
1.575
Operating Current (mA)
4266
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
70
Supplier Temperature Grade
Commercial
Module Sides
Double
ECC Support
有
Number of Ranks
Dual
Number of Chip Banks
8
CAS Latency
9
PC Type
PC3-10600
SPD EEPROM Support
有
Standard Package Name
DIM
Supplier Package
VLP RDIMM
Mounting
Socket
Package Height
18(Max)
Package Length
133.5(Max)
Package Width
9.01(Max)
PCB changed
240
Lead Shape
No Lead
Number of Elements
36
RoHS
Compliant
包装
Tray
零件状态
Obsolete
最高工作温度
70 °C
最小工作温度
0 °C
引脚数量
240
工作电源电压
1.5 V
最大电源电压
1.575 V
最小电源电压
1.425 V
组织结构
512Mx72
最高频率
1.333 GHz
锁相环
有
刷新周期
8K
自我刷新
有
模块类型
240RDIMM
RoHS状态
符合RoHS标准
MT36JBZS51272PY-1G4D1拓展信息
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