Micron Technology MT8HTF12864HTY-667E1
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MT8HTF12864HTY-667E1
1616-MT8HTF12864HTY-667E1
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DRAM Module DDR2 SDRAM 1Gbyte 200SODIMM Tray
1最小包装量--
MT8HTF12864HTY-667E1详情
Micron Technology MT8HTF12864HTY-667E1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
4A994.a
HTS
8542.32.00.32
Module
DRAM模块
Module Density
1Gbyte
Number of Chip per Module
8
Chip Density (bit)
1G
Data Bus Width (bit)
64
Maximum Clock Rate (MHz)
667
Chip Configuration
64Mx16
Minimum Operating Supply Voltage (V)
1.7
Typical Operating Supply Voltage (V)
1.8
Maximum Operating Supply Voltage (V)
1.9
Operating Current (mA)
900
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
85
Supplier Temperature Grade
Industrial
Module Sides
Double
ECC Support
无
Number of Ranks
Dual
Number of Chip Banks
8
CAS Latency
5
PC Type
PC2-5300
SPD EEPROM Support
有
Standard Package Name
DIM
Supplier Package
SODIMM
Mounting
Socket
Package Height
31.15(Max)
Package Length
67.75(Max)
Package Width
3.8(Max)
PCB changed
200
Lead Shape
No Lead
包装
Tray
零件状态
Obsolete
引脚数量
200
组织结构
128Mx64
锁相环
无
刷新周期
8K
自我刷新
有
模块类型
200SODIMM
RoHS状态
符合RoHS标准
MT8HTF12864HTY-667E1拓展信息
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