Micron Technology MT8HTF6464HDY-800F1
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MT8HTF6464HDY-800F1
1616-MT8HTF6464HDY-800F1
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DRAM Module DDR2 SDRAM 512Mbyte 200SODIMM Tray
1最小包装量--
MT8HTF6464HDY-800F1详情
Micron Technology MT8HTF6464HDY-800F1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
EAR99
Module
DRAM模块
Module Density
512Mbyte
Number of Chip per Module
8
Chip Density (bit)
512M
Data Bus Width (bit)
64
Maximum Clock Rate (MHz)
800
Chip Configuration
32Mx16
Minimum Operating Supply Voltage (V)
1.7
Typical Operating Supply Voltage (V)
1.8
Maximum Operating Supply Voltage (V)
1.9
Operating Current (mA)
1200
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
70
Supplier Temperature Grade
Commercial
Module Sides
Double
ECC Support
无
Number of Ranks
Dual
Number of Chip Banks
4
CAS Latency
6
PC Type
PC2-6400
SPD EEPROM Support
有
Standard Package Name
DIM
Supplier Package
SODIMM
Mounting
Socket
Package Height
31.15(Max)
Package Length
67.75(Max)
Package Width
3.8(Max)
PCB changed
200
Lead Shape
No Lead
包装
Tray
零件状态
Obsolete
引脚数量
200
组织结构
64Mx64
锁相环
无
刷新周期
8K
自我刷新
有
模块类型
200SODIMM
RoHS状态
符合RoHS标准
MT8HTF6464HDY-800F1拓展信息
Micron Technology
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