Micron Technology MT8JTF51264AZ-1G6E1 BULK
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MT8JTF51264AZ-1G6E1 BULK
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DRAM Module DDR3 SDRAM 4Gbyte 240UDIMM
1最小包装量--
MT8JTF51264AZ-1G6E1 BULK详情
Micron Technology MT8JTF51264AZ-1G6E1 BULK重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
EAR99
Module
DRAM模块
Module Density
4Gbyte
Number of Chip per Module
8
Chip Density (bit)
4G
Data Bus Width (bit)
64
Max. Access Time (ns)
900
Maximum Clock Rate (MHz)
400
Minimum Operating Supply Voltage (V)
1.425
Typical Operating Supply Voltage (V)
1.5
Maximum Operating Supply Voltage (V)
1.575
Operating Current (mA)
1160
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
70
Supplier Temperature Grade
Commercial
Module Sides
Single
ECC Support
无
Number of Ranks
Single
CAS Latency
11
PC Type
PC3-12800
SPD EEPROM Support
有
Standard Package Name
DIM
Supplier Package
UDIMM
Mounting
Socket
Package Height
30.5(Max)
Package Length
133.5(Max)
Package Width
2.7(Max)
PCB changed
240
Lead Shape
No Lead
零件状态
Obsolete
引脚数量
240
组织结构
512Mx64
锁相环
无
刷新周期
8K
自我刷新
有
模块类型
240UDIMM
RoHS状态
是,有豁免
MT8JTF51264AZ-1G6E1 BULK拓展信息
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