Micron Technology MT8JTF51264HDZ-1G4D1
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MT8JTF51264HDZ-1G4D1
1616-MT8JTF51264HDZ-1G4D1
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DRAM Module DDR3 SDRAM 4Gbyte 204SODIMM
1最小包装量--
MT8JTF51264HDZ-1G4D1详情
Micron Technology MT8JTF51264HDZ-1G4D1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
EAR99
HTS
8473.30.11.40
Module
DRAM模块
Module Density
4Gbyte
Number of Chip per Module
8
Chip Density (bit)
4G
Data Bus Width (bit)
64
Maximum Clock Rate (MHz)
1333
Chip Configuration
256Mx16
Minimum Operating Supply Voltage (V)
1.425
Typical Operating Supply Voltage (V)
1.5
Maximum Operating Supply Voltage (V)
1.575
Operating Current (mA)
1040
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
70
Supplier Temperature Grade
Commercial
Module Sides
Double
ECC Support
无
Number of Ranks
Dual
Number of Chip Banks
8
CAS Latency
9
PC Type
PC3-10600
SPD EEPROM Support
有
Standard Package Name
DIM
Supplier Package
SODIMM
Mounting
Socket
Package Height
30.15(Max)
Package Length
67.75(Max)
Package Width
3.8(Max)
PCB changed
204
Lead Shape
No Lead
零件状态
Obsolete
引脚数量
204
组织结构
512Mx64
锁相环
无
刷新周期
8K
自我刷新
有
模块类型
204SODIMM
RoHS状态
是,有豁免
MT8JTF51264HDZ-1G4D1拓展信息
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