Micron Technology NAND512R3A2BZA6E

EU RoHS

Compliant

ECCN (US)

3A991.b.1.a

Automotive

无

PPAP

无

Cell Type

SLC NAND

Chip Density (bit)

512M

Block Organization

Symmetrical

Address Bus Width (bit)

27

Number of Bits/Word (bit)

8

Number of Words

64M

Programmability

有

Timing Type

Asynchronous

Max. Access Time (ns)

15000

Maximum Erase Time (S)

0.003/Block

Maximum Page Access Time (ns)

50(Min)

Maximum Programming Time (ms)

0.5/Page

Interface Type

Parallel

Minimum Operating Supply Voltage (V)

1.7

Typical Operating Supply Voltage (V)

1.8

Maximum Operating Supply Voltage (V)

1.95

Operating Current (mA)

15

Program Current (mA)

15

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

85

Supplier Temperature Grade

Industrial

Command Compatible

无

ECC Support

有

Support of Page Mode

有

Mounting

表面贴装

Package Height

0.7(Max)

Package Width

9

Package Length

11

PCB changed

63

Standard Package Name

BGA

Supplier Package

VFBGA

Lead Shape

Ball

包装

Tube

零件状态

Unconfirmed

引脚数量

63

建筑学

Sectored

行业规模

16Kbyte x 4096

页面尺寸

256Words/512byte

引导模块

无