Micron Technology NAND512W3A0AN6

底架

表面贴装

引脚数

48

EU RoHS

不合规

ECCN (US)

3A991.b.1.a

SVHC

有

Automotive

无

PPAP

无

Cell Type

SLC NAND

Chip Density (bit)

512M

Block Organization

Symmetrical

Address Bus Width (bit)

27

Number of Bits/Word (bit)

8

Number of Words

64M

Programmability

有

Timing Type

Asynchronous

Max. Access Time (ns)

12000

Maximum Erase Time (S)

0.003/Block

Maximum Page Access Time (ns)

50(Min)

Maximum Programming Time (ms)

0.5/Page

Interface Type

Parallel

Minimum Operating Supply Voltage (V)

2.7

Typical Operating Supply Voltage (V)

3.3|3

Maximum Operating Supply Voltage (V)

3.6

Operating Current (mA)

20

Program Current (mA)

20

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

85

Supplier Temperature Grade

Industrial

Command Compatible

无

ECC Support

有

Support of Page Mode

有

Mounting

表面贴装

Package Height

1

Package Width

18.4

Package Length

12

PCB changed

48

Standard Package Name

SOP

Supplier Package

TSOP

Lead Shape

Gull-wing

RoHS

Compliant

Memory Types

SLC NAND

包装

Tube

零件状态

Unconfirmed

最高工作温度

85 °C

最小工作温度

-40 °C

引脚数量

48

界面

Parallel

最大电源电压

3.6 V

最小电源电压

2.7 V

电源电流

20 mA

访问时间

12 µs

建筑学

Sectored

地址总线宽度

25 b

密度

512 Mb

同步/异步

Asynchronous

字长

8 b

行业规模

16Kbyte x 4096

页面尺寸

256Words/512byte

引导模块

无

辐射硬化

无