APT1001RBNRG详情
Microsemi APT1001RBNRG重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
终端数量
3
晶体管元件材料
SILICON
Manufacturer Part Number
APT1001RBNRG
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MICROSEMI CORP
Package Description
FLANGE MOUNT, R-PSFM-T3
Risk Rank
5.63
Drain Current-Max (ID)
11 A
Number of Elements
1
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
端子位置
SINGLE
终端形式
THROUGH-HOLE
Reach合规守则
compliant
JESD-30代码
R-PSFM-T3
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
极性/通道类型
N-CHANNEL
JEDEC-95代码
TO-247AD
漏极-源极导通最大电阻
1 Ω
脉冲漏极电流-最大值(IDM)
44 A
DS 击穿电压-最小值
1000 V
雪崩能量等级(Eas)
1210 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
APT1001RBNRG拓展信息
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi








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