Microsemi Corporation APT1001R1BNR
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APT1001R1BNR
1604-APT1001R1BNR
晶体管 - 特殊用途
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
1最小包装量--
APT1001R1BNR详情
Microsemi Corporation APT1001R1BNR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MICROSEMI CORP
Part Package Code
TO-247AD
Package Description
,
Drain Current-Max (ID)
10.5 A
Number of Elements
1
Operating Temperature-Max
150 °C
ECCN 代码
EAR99
Reach合规守则
compliant
引脚数量
3
配置
SINGLE
操作模式
增强型MOSFET
极性/通道类型
N-CHANNEL
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
310 W
APT1001R1BNR拓展信息
SamHop Microelectronics Corp.
SamHop Microelectronics Corp.
SamHop Microelectronics Corp.
SamHop Microelectronics Corp.
SamHop Microelectronics Corp.
Microsemi Corporation
Microsemi Corporation
SamHop Microelectronics Corp.
Microsemi Corporation
SamHop Microelectronics Corp.








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