Mitsubishi Electric RD02MUS1B
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RD02MUS1B
1645-RD02MUS1B
晶体管 - 特殊用途
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RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10
1最小包装量--
RD02MUS1B详情
Mitsubishi Electric RD02MUS1B重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
Contact plating
gold-plated
Number of pins
90
终端数量
3
晶体管元件材料
SILICON
外壳材料
1
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MITSUBISHI ELECTRIC CORP
Package Description
CHIP CARRIER, R-XQCC-N3
Drain Current-Max (ID)
1.5 A
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER
Type of connector
pin strips
Connector
socket
Kind of connector
female
Spatial orientation
straight
Contacts pitch
2.54mm
Electrical mounting
THT
Connector pinout layout
2x45
Row pitch
2.54mm
Gross weight
4.05 g
Operating temperature
-40...163°C
ECCN 代码
EAR99
端子位置
QUAD
终端形式
无铅
Reach合规守则
unknown
Current rating
1.5A
引脚数量
10
JESD-30代码
R-XQCC-N3
资历状况
不合格
配置
SINGLE
操作模式
增强型MOSFET
箱体转运
SOURCE
晶体管应用
AMPLIFIER
极性/通道类型
N-CHANNEL
DS 击穿电压-最小值
30 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
Rated voltage
60V
最高频段
超高频段
个人资料
beryllium copper
Plating thickness
0.254µm
Flammability rating
UL94V-0
RD02MUS1B拓展信息
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