MORNSUN VRB4805LD-15W

表面安装

NO

包装/外壳

TO-92-3 Kinked Lead

终端数量

6

Emitter- Base Voltage VEBO

4.5 V

Pd - Power Dissipation

625 mW

Transistor Polarity

NPN

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

200

Package Style

IN-LINE

Package Body Material

METAL

Package Equivalence Code

DIP6/18,.8

Operating Temperature-Min

-40

Operating Temperature-Max

85

Input Voltage-Max

75

Package Code

DIP

Package Shape

RECTANGULAR

Input Voltage-Min

36

Output Voltage-Nom

5

Collector-Emitter Saturation Voltage

700 mV

Unit Weight

0.008466 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2000

Mounting Styles

通孔

Gain Bandwidth Product fT

30 MHz

Part # Aliases

2N5210TA_NL

Manufacturer

onsemi

Brand

onsemi / Fairchild

Maximum DC Collector Current

100 mA

DC Current Gain hFE Max

600

RoHS

Details

Collector- Emitter Voltage VCEO Max

50 V

Package Description

DIP, DIP6/18,.8

Rohs Code

有

Manufacturer Part Number

VRB4805LD-15W

Part Life Cycle Code

接触制造商

Ihs Manufacturer

MORNSUN GUANGZHOU SCIENCE & TECHNOLOGY LTD

Risk Rank

5.6

系列

2N5210

包装

弹药包

子类别

Transistors

技术

Si

端子位置

DUAL

终端形式

THROUGH-HOLE

端子间距

2.54

JESD-30代码

R-MDIP-T6

资历状况

不合格

温度等级

INDUSTRIAL

配置

Single

输出电流-最大值

3

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

50 V

连续集电极电流

0.1 A

产品类别

Bipolar Transistors - BJT

宽度

3.93 mm

高度

4.7 mm

长度

4.7 mm

达到SVHC

unknown