National Semiconductor TLV2632IDR
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TLV2632IDR
1704-TLV2632IDR
线性器件 - 放大器 - 仪器、运算放大器、缓冲放大器
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Op Amp Dual Wideband Amplifier R-R O/P ±2.75V/5.5V 8-Pin SOIC T/R
1最小包装量--
TLV2632IDR详情
National Semiconductor TLV2632IDR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Mounting
表面贴装
Power Supply Rejection Ratio
70(dB)
Single Supply Voltage (Max)
5.5(V)
Unity Gain Bandwidth Product
9
Dual Supply Voltage (Max)
±2.75(V)
Input Offset Voltage
3.5(mV)
Rad Hardened
无
Rail/Rail I/O Type
轨转轨输出
Single Supply Voltage (Typ)
3/5(V)
Shut Down Feature
无
Number of Elements
2
Operating Temp Range
-40C to 125C
Power Supply Requirement
Single/Dual
Voltage Gain in dB
100(dB)
Maximum Input Offset Current
0.00005@5V
Single Supply Voltage (Min)
2.7(V)
Package Type
SOIC
Operating Temperature Classification
汽车
Dual Supply Voltage (Min)
±1.35(V)
包装
卷带
类型
WIDEBAND AMPLIFIER
引脚数量
8
功率耗散
0.71(W)
压摆率
6(V/us)
共模拒绝率
77(dB)
输入偏置电流
0.05(nA)
供应电流
2@5V(mA)
TLV2632IDR拓展信息
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