National Semiconductor Corporation MMBF5486
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MMBF5486
1704-MMBF5486
晶体管 - 特殊用途
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Description: RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB
1最小包装量--
MMBF5486详情
National Semiconductor Corporation MMBF5486重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
材料
screen - nickel-plated copper - 0.23 mm
Housing material
polyester (UL 94V-0)
终端数量
3
晶体管元件材料
SILICON
外壳材料
1
Rohs Code
无
Part Life Cycle Code
Transferred
Ihs Manufacturer
NATIONAL SEMICONDUCTOR CORP
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Gross weight
45.50
Transport packaging size/quantity
53*27.5*31.5/300
Compatibility
10P10C/ 10P8C FTP plugs (with screen)
Dielectric withstand voltage
1000 (at Uisol.dc=500 V) V
Number of switching cycles (electrical)
750 times min
JESD-609代码
e0
ECCN 代码
EAR99
Connector type
8-port socket block 10P8C FTP (1 x 8)
端子表面处理
Tin/Lead (Sn/Pb)
端子位置
DUAL
终端形式
鸥翼
深度
21.27 (21.5 measured) mm
Reach合规守则
unknown
JESD-30代码
R-PDSO-G3
资历状况
不合格
Contact resistance
30 mΩ max
配置
SINGLE
Insulation resistance
500 MΩ min
操作模式
DEPLETION MODE
晶体管应用
AMPLIFIER
极性/通道类型
N-CHANNEL
Operating temperature range
-20…+70 °C
JEDEC-95代码
TO-236AB
场效应管技术
JUNCTION
最大耗散功率(Abs)
0.225 W
反馈上限-最大值 (Crss)
1 pF
最高频段
超高频段
功率增益-最小值(Gp)
10 dB
高度
13.8 (housing) mm
宽度
114.94 mm
MMBF5486拓展信息
National Semiconductor Corporation
National Semiconductor Corporation
National Semiconductor Corporation
National Semiconductor Corporation
National Semiconductor Corporation
National Semiconductor Corporation
National Semiconductor Corporation
National Semiconductor Corporation
National Semiconductor Corporation
National Semiconductor Corporation







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