National Semiconductor Corporation MMBFJ112
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MMBFJ112
1704-MMBFJ112
晶体管 - 特殊用途
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Description: Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236AB
1最小包装量--
MMBFJ112详情
National Semiconductor Corporation MMBFJ112重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
材料
contact - phosphor bronze with coating - Ni/housing - GF PBT (UL94V-0), black
终端数量
3
晶体管元件材料
SILICON
外壳材料
1
Gross weight
0.10
Transport packaging size/quantity
42*28*23.5/100000
Mounting method
cable crimping
Nominal current
1 A
Dielectric strength
100 (50 Hz, 1 min.) V
Contact pitch
2.54 mm
Rohs Code
无
Part Life Cycle Code
Transferred
Ihs Manufacturer
NATIONAL SEMICONDUCTOR CORP
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
JESD-609代码
e0
ECCN 代码
EAR99
Connector type
MJ-0-B series jumper connector
端子表面处理
Tin/Lead (Sn/Pb)
端子位置
DUAL
终端形式
鸥翼
深度
2.4 mm
Reach合规守则
compliant
JESD-30代码
R-PDSO-G3
资历状况
不合格
Number of contacts
double contact jumper
Contact resistance
30 mOhm max
配置
SINGLE
Insulation resistance
500 MOhm min
操作模式
DEPLETION MODE
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
Operating temperature range
-20…+85 °C
JEDEC-95代码
TO-236AB
场效应管技术
JUNCTION
最大耗散功率(Abs)
0.35 W
高度
6.0 mm
宽度
5 mm
MMBFJ112拓展信息
National Semiconductor Corporation
National Semiconductor Corporation
National Semiconductor Corporation
National Semiconductor Corporation
National Semiconductor Corporation
National Semiconductor Corporation
National Semiconductor Corporation
National Semiconductor Corporation
National Semiconductor Corporation
National Semiconductor Corporation







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