Nexperia USA Inc. BC856AQB-QZ
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BC856AQB-QZ
1729-BC856AQB-QZ
晶体管 - 双极性晶体管(BJT)- 单个
3-XDFN Exposed Pad
大陆
立即发货

SMALL SIGNAL BIPOLAR IN DFN PACK
1最小包装量--
BC856AQB-QZ详情
Nexperia USA Inc. BC856AQB-QZ重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
Surface Mount, Wettable Flank
包装/外壳
3-XDFN Exposed Pad
供应商器件包装
DFN1110D-3
厂商
Nexperia USA Inc.
Package
Tape & Reel (TR)
Product Status
活跃
Current-Collector (Ic) (Max)
100 mA
Qualification
AEC-Q101
Emitter- Base Voltage VEBO
6 V
Pd - Power Dissipation
420 mW
Transistor Polarity
PNP
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
125 at - 2 mA, - 5 V
Collector-Emitter Saturation Voltage
650 mV
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
5000
Mounting Styles
SMD/SMT
Gain Bandwidth Product fT
100 MHz
Part # Aliases
934663996147
Manufacturer
Nexperia
Brand
Nexperia
Maximum DC Collector Current
200 mA
DC Current Gain hFE Max
250 at - 2 mA, - 5 V
RoHS
Details
Collector- Emitter Voltage VCEO Max
65 V
系列
Automotive, AEC-Q101
操作温度
150°C (TJ)
包装
MouseReel
子类别
Transistors
技术
Si
配置
Single
功率 - 最大
340 mW
产品类别
BJTs - Bipolar Transistors
晶体管类型
PNP
最小直流增益(hFE)@ Ic, Vce
125 @ 2mA, 5V
最大集极截止电流
15nA (ICBO)
不同 Ib, Ic 时 Vce 饱和度(最大值)
650mV @ 5mA, 100mA
电压 - 集射极击穿(最大值)
65 V
频率转换
100MHz
集电极基极电压(VCBO)
80 V
连续集电极电流
- 100 mA
产品类别
Bipolar Transistors - BJT
BC856AQB-QZ拓展信息
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.







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