Nexperia USA Inc. BC856BQC-QZ

包装/外壳

3-XDFN Exposed Pad

安装类型

Surface Mount, Wettable Flank

供应商器件包装

DFN1412D-3

厂商

Nexperia USA Inc.

Product Status

活跃

Current-Collector (Ic) (Max)

100 mA

Number of Elements per Chip

1

Package Type

DFN1412D-3

Maximum Collector Emitter Voltage

-65 V

Maximum DC Collector Current

100 mA

Minimum DC Current Gain

220

MSL

-

Qualification

AEC-Q101

Transistor Polarity

PNP

Emitter- Base Voltage VEBO

6 V

Pd - Power Dissipation

450 mW

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

220 at - 2 mA, - 5 V

Collector-Emitter Saturation Voltage

650 mV

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Gain Bandwidth Product fT

100 MHz

Part # Aliases

934664270147

Manufacturer

Nexperia

Brand

Nexperia

DC Current Gain hFE Max

475 at - 2 mA, - 5 V

RoHS

Details

Collector- Emitter Voltage VCEO Max

65 V

系列

Automotive, AEC-Q101, BC856xQC-Q

操作温度

150°C (TJ)

包装

MouseReel

子类别

Transistors

技术

Si

配置

Single

功率耗散

450mW

功率 - 最大

360 mW

产品类别

BJTs - Bipolar Transistors

晶体管类型

PNP

最小直流增益（hFE）@ Ic, Vce

220 @ 2mA, 5V

最大集极截止电流

15nA (ICBO)

不同 Ib, Ic 时 Vce 饱和度（最大值）

650mV @ 5mA, 100mA

电压 - 集射极击穿（最大值）

65 V

转换频率

100MHz

频率转换

100MHz

集电极基极电压(VCBO)

80 V

连续集电极电流

100mA

产品类别

Bipolar Transistors - BJT